onsemi will pair its silicon drivers, controllers and thermally enhanced packages with GlobalFoundries’ 650V GaN technology platform to deliver optimized gallium nitride (GaN) devices with higher power density and efficiency.
onsemi has announced that it has signed a collaboration agreement with GlobalFoundries (GF) to develop and manufacture advanced gallium nitride (GaN) power products using GF’s state-of-the-art 200mm eMode GaN-on-silicon process, starting with 650V.

This collaboration accelerates onsemi’s roadmap for high-performance GaN devices and integrated power stages, expanding its portfolio with high-voltage products to meet the growing power demands of AI data centers, electric vehicles, renewable energy, industrial systems, and aerospace, defense and security, onsemi said.

“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets,” said Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi. “Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications, and beyond. We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production.”